• 主题
高级搜索  >
历史搜索 清空历史
首页> 外文会议>Global Symposium on Millimeter Waves >Developing the Ka-band GaN power HEMT devices
【24h】

Developing the Ka-band GaN power HEMT devices

机译：开发KA带GaN电源HEMT设备

获取原文
页面导航
  • 摘要
  • 著录项
  • 相似文献
  • 相关主题

摘要

High quality Al0.3Ga0.7N/GaN/Al0.04Ga0.96N double heterostructure was grown by metal-organic chemical vapor deposition (MOCVD). Two kinds of fabrication technology of Ka band GaN HEMT devices were developed. Using developed 0.25 μm self-aligned T-shaped gate technology, a 4.5 W/mm output power density and 28% PAE were obtained in continues wave (CW) mode at 34GHz. To increase the frequency performance of the GaN HEMT devices, a 0.15 μm Y-shaped gate technology was developed. By using this technology, the parasitic capacitance is effectively suppressed. The fT and fmax of the GaN HEMT device fabricated with the 0.15 μm Y-shaped gate technologies were greatly improved and reached 80GHz and 110GHz, respectively. A 3.1 W/mm output power density and 26.3% PAE were also obtained in CW mode at 34GHz.
机译：高质量的Al0.3Ga0.7N / GaN / Al0.04ga0.96N双异质结构通过金属 - 有机化学气相沉积（MOCVD）生长。开发了两种ka带GaN HEMT器件的制造技术。使用开发的0.25μm自对准T形栅极技术，在34GHz的延续波（CW）模式下获得4.5W / mm输出功率密度和28％PAE。为了提高GaN HEMT器件的频率性能，开发了0.15μm的Y形栅极技术。通过使用该技术，有效地抑制了寄生电容。采用0.15μmy形栅极技术制造的GaN HEMT器件的FT和FMAX分别得到了大大提高和达到80GHz和110GHz。在34GHz的CW模式下也可以在CW模式下获得3.1W / mm输出功率密度和26.3％PAE。

著录项

相似文献

  • 外文文献
  • 中文文献
  • 专利
获取原文

客服邮箱：kefu@zhangqiaokeyan.com

京公网安备：11010802029741号 ICP备案号：京ICP备15016152号-6 六维联合信息科技 (北京) 有限公司©版权所有

  • 客服微信

  • 服务号