PARTIALLY DEPLETED SOI DYNAMIC THRESHOLD MOSFET FOR LOW-VOLTAGE AND MICROWAVE APPLICATIONS

机译：用于低电压和微波应用的部分耗尽SOI动态阈值MOSFET

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In this paper, the performances of a SOI Dynamic Threshold MOSFET (DTMOS) are presented for both low and high frequency and are compared with conventional MOSFET. For the first time, a difference between the DC and RF transconductance of a silicon-based device has been observed. Preliminary explanations of this phenomenon are proposed.

机译：本文介绍了SOI动态阈值MOSFET（DTMOS）在低频和高频下的性能，并与常规MOSFET进行了比较。首次观察到硅基器件的直流和射频跨导之间的差异。提出了对此现象的初步解释。

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来源
《Electrochemical Society Meeting and International Symposium on ULSI Process Integration III; 20030428-20030502; Paris; FR》|2003年|P.578-583|共6页
会议地点 Paris(FR);Paris(FR)
作者
M. Dehan; D. Vanhoenacker-Janvier; J.-P. Raskin;
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作者单位

Universite catholique de Louvain, Microwave Lab. Place du Levant, 3, 1348 Louvain-la-Neuve, Belgium;

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原文格式 PDF
正文语种 eng
中图分类大规模集成电路、超大规模集成电路;
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专利

1. Partially Depleted SOI Versus Deep N-Well Protected Bulk-Si MOSFETs: A High-Temperature RF Study for Low-Voltage Low-Power Applications [J] . Emam M., Raskin J.-P. Microwave Theory and Techniques, IEEE Transactions on . 2013,第4期

机译：部分耗尽的SOI与受N阱保护的体硅MOSFET相比：针对低压低功率应用的高温RF研究
2. A novel low-voltage content-addressable-memory (CAM) cell with afast tag-compare capability using partially depleted (PD) SOI CMOSdynamic-threshold (DTMOS) techniques [J] . Liu S.C., Wu F.A., Kuo J.B. IEEE Journal of Solid-State Circuits . 2001,第4期

机译：使用部分耗尽（PD）SOI CMOS动态阈值（DTMOS）技术的具有快速标签比较功能的新型低压内容可寻址内存（CAM）单元
3. Threshold voltage instability at low temperatures in partially depleted thin-film SOI MOSFETs [J] . Wang J., Kistler N. IEEE Electron Device Letters . 1991,第6期

机译：部分耗尽的薄膜SOI MOSFET在低温下的阈值电压不稳定性
4. PARTIALLY DEPLETED SOI DYNAMIC THRESHOLD MOSFET FOR LOW-VOLTAGE AND MICROWAVE APPLICATIONS [C] . M. Dehan, D. Vanhoenacker-Janvier, J.-P. Raskin Electrochemical Society Meeting and International Symposium on Silicon-on-Insulator Technology and Devices XI; 20030428-20030502; Paris; FR . 2003

机译：用于低电压和微波应用的部分耗尽SOI动态阈值MOSFET
5. Area efficient body contact for partially depleted silicon-on-insulator (SOI) MOSFETs. [D] . Daghighi, Arash. 2004

机译：适用于部分耗尽型绝缘体上硅（SOI）MOSFET的面积有效体接触。
6. Empirical and Theoretical Modeling of Low-Frequency Noise Behavior of Ultrathin Silicon-on-Insulator MOSFETs Aiming at Low-Voltage and Low-Energy Regime [O] . Yasuhisa Omura 2019

机译：面向低电压低能耗的超薄绝缘体上硅MOSFET低频噪声行为的经验和理论模型
7. Sub-threshold startup charge pump using depletion MOSFET for a low-voltage harvesting application [O] . Gael Pillonnet, Thomas Martinez 2015

机译：使用耗尽MOSFET进行低压收集应用的子阈值启动泵

PARTIALLY DEPLETED SOI DYNAMIC THRESHOLD MOSFET FOR LOW-VOLTAGE AND MICROWAVE APPLICATIONS

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