Influence of the Drain Bias and Gate Length of Partially Depleted SOI MOSFETs on the ZTC Biasing Point

机译：漏极偏置和栅极长度对ZTC偏置点的部分耗尽SOI MOSFET的影响

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This paper presents the influence of the drain bias and gate length of partially depleted SOI MOSFETs on the Zero Temperature Coefficient (ZTC) for devices operating at high temperatures (from room temperature up to 573K). The analysis takes into account temperature dependent model parameters such as threshold voltage and mobility. The analytical predictions are in very close agreement with experimental results in spite of the simplification used for the V{sub}(ZTC) model as a function of temperature in the linear and the saturation region.

机译：本文介绍了在高温下操作的零温度系数（ZTC）上部分耗尽的SOI MOSFET的漏极偏置和栅极长度的影响（从室温高达573K）。该分析考虑了诸如阈值电压和移动性等温度相关的模型参数。尽管V {Sub}（ZTC）模型作为线性和饱和区域中的温度的函数，但分析预测仍然与实验结果非常密切地与实验结果相吻合。

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《Symposium on Microelectronics Technology and Devices》|2008年||共10页
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L. M. Camillo; J. A. Martino; E. Simoen; C. Claeys;
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中图分类 TN4-53;
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专利

1. Impact of gate tunneling floating-body charging on drain current transients of 0.10 μm-CMOS partially depleted SOI MOSFETs [J] . J.M. Rafi, A. Mercha, E. Simoen, Solid-State Electronics . 2004,第7期

机译：栅极隧穿浮体充电对0.10μm-CMOS部分耗尽SOI MOSFET的漏极电流瞬变的影响
2. Junction influence on drain current transients in partially-depleted SOI MOSFETs [J] . Ionescu A.M., Chovet A. Electronics Letters . 1997,第20期

机译：结对部分耗尽SOI MOSFET中漏极电流瞬变的影响
3. Impact of back-gate bias on the hysteresis effect in partially depleted SOI MOSFETs [J] . Luo Jie-Xin, Chen Jing, Zhou Jian-Hua, 中国物理：英文版 . 2012,第005期

机译：背栅偏置对部分耗尽的SOI MOSFET的磁滞效应的影响
4. Influence of the Drain Bias and Gate Length of Partially Depleted SOI MOSFETs on the ZTC Biasing Point [C] . L. M. Camillo, J. A. Martino, E. Simoen, Microelectronics Technology and Devices-SBMicro 2008 . 2008

机译：部分耗尽的SOI MOSFET的漏极偏置和栅极长度对ZTC偏置点的影响
5. Area efficient body contact for partially depleted silicon-on-insulator (SOI) MOSFETs. [D] . Daghighi, Arash. 2004

机译：适用于部分耗尽型绝缘体上硅（SOI）MOSFET的面积有效体接触。
6. Radiation Response of Negative Gate Biased SiC MOSFETs [O] . Akinori Takeyama, Takahiro Makino, Shuichi Okubo, 2019

机译：负栅偏置SiC MOSFET的辐射响应
7. A Study of Gate Length and Source-Drain Bias on Electron Transport Properties in SiC Based MOSFETs Using Monte Carlo Method [O] . H. Arabshahi 2013

机译：用monte Carlo方法研究siC基mOsFET中电子输运特性的栅长和源漏偏差

Influence of the Drain Bias and Gate Length of Partially Depleted SOI MOSFETs on the ZTC Biasing Point

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