Influence of the Drain Bias and Gate Length of Partially Depleted SOI MOSFETs on the ZTC Biasing Point

机译：部分耗尽的SOI MOSFET的漏极偏置和栅极长度对ZTC偏置点的影响

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This paper presents the influence of the drain bias and gate length of partially depleted SOI MOSFETs on the Zero Temperature Coefficient (ZTC) for devices operating at high temperatures (from room temperature up to 573K). The analysis takes into account temperature dependent model parameters such as threshold voltage and mobility. The analytical predictions are in very close agreement with experimental results in spite of the simplification used for the V_(ZTC) model as a function of temperature in the linear and the saturation region.

机译：本文介绍了部分耗尽的SOI MOSFET的漏极偏置和栅极长度对在高温下（从室温到573K）工作的器件的零温度系数（ZTC）的影响。该分析考虑了与温度有关的模型参数，例如阈值电压和迁移率。尽管将V_（ZTC）模型简化为线性和饱和区域中温度的函数，但分析预测与实验结果非常吻合。

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来源
《Microelectronics Technology and Devices-SBMicro 2008》|2008年|243-252|共10页
会议地点 Gramado(BR);Gramado(BR);Gramado(BR);Gramado(BR);Gramado(BR);Gramado(BR)
作者
L. M. Camillo; J. A. Martino; E. Simoen; C. Claeys;
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作者单位

LSI/PSI/USP, University of Sao Paulo, Brazil;

LSI/PSI/USP, University of Sao Paulo, Brazil;

IMEC, Kapeldreef 75, B-3001 Leuven, Belgium;

IMEC, Kapeldreef 75, B-3001 Leuven, Belgium E.E. Dept., KU Leuven, Leuven, Belgium;

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原文格式 PDF
正文语种 eng
中图分类微电子学、集成电路（IC）;
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专利

1. Impact of gate tunneling floating-body charging on drain current transients of 0.10 μm-CMOS partially depleted SOI MOSFETs [J] . J.M. Rafi, A. Mercha, E. Simoen, Solid-State Electronics . 2004,第7期

机译：栅极隧穿浮体充电对0.10μm-CMOS部分耗尽SOI MOSFET的漏极电流瞬变的影响
2. Junction influence on drain current transients in partially-depleted SOI MOSFETs [J] . Ionescu A.M., Chovet A. Electronics Letters . 1997,第20期

机译：结对部分耗尽SOI MOSFET中漏极电流瞬变的影响
3. Impact of back-gate bias on the hysteresis effect in partially depleted SOI MOSFETs [J] . Luo Jie-Xin, Chen Jing, Zhou Jian-Hua, 中国物理：英文版 . 2012,第005期

机译：背栅偏置对部分耗尽的SOI MOSFET的磁滞效应的影响
4. Influence of the Drain Bias and Gate Length of Partially Depleted SOI MOSFETs on the ZTC Biasing Point [C] . L. M. Camillo, J. A. Martino, E. Simoen, Symposium on Microelectronics Technology and Devices . 2008

机译：漏极偏置和栅极长度对ZTC偏置点的部分耗尽SOI MOSFET的影响
5. Area efficient body contact for partially depleted silicon-on-insulator (SOI) MOSFETs. [D] . Daghighi, Arash. 2004

机译：适用于部分耗尽型绝缘体上硅（SOI）MOSFET的面积有效体接触。
6. Radiation Response of Negative Gate Biased SiC MOSFETs [O] . Akinori Takeyama, Takahiro Makino, Shuichi Okubo, 2019

机译：负栅偏置SiC MOSFET的辐射响应
7. A Study of Gate Length and Source-Drain Bias on Electron Transport Properties in SiC Based MOSFETs Using Monte Carlo Method [O] . H. Arabshahi 2013

机译：用monte Carlo方法研究siC基mOsFET中电子输运特性的栅长和源漏偏差

Influence of the Drain Bias and Gate Length of Partially Depleted SOI MOSFETs on the ZTC Biasing Point

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