Enhanced DC and RF performance of AlGaN/GaN HEMTs on CVD-Diamond in high power CW operation

机译：高功率CW操作中的CVD-金刚石上的AlGaN / GaN Hemts的增强直流和RF性能

获取原文

页面导航

摘要
著录项
相似文献
相关主题

摘要

We have investigated the DC and RF performances of AlGaN/GaN HEMTs on CVD-Diamond at high power density continuous wave (CW) operating condition. About 4-times improved DC and RF performances were observed in GaN/Dia HEMTs, which was due to the lower rise in junction temperature at higher CW operating power density. This was confirmed by theoretical TCAD simulation. The improved DC and RF performance from GaN/Dia HEMTs are promising for high power density CW operating DC and RF applications.

机译：我们已经在高功率密度连续波（CW）操作条件下调查了AlGaN / GaN Hemts对CVD-金刚石的DC和RF性能。在GaN / Dia Hemts中观察到大约4倍的改进的DC和RF性能，这是由于在较高CW工作功率密度下的结温升高。这是通过理论TCAD模拟确认的。来自GaN / Dia Hemts的改进的DC和RF性能对于高功率密度CW操作DC和RF应用是有前途的。

著录项

来源
《Electron Devices Technology and Manufacturing Conference》|2019年|xi 480 p. :|共3页
会议地点
作者
K. Ranjan; Ng Geok Ing; S. Arulkumaran; S. Vicknesh; S. C. Foo;
展开▼
作者单位

展开▼
会议组织
原文格式 PDF
正文语种
中图分类一般性问题;
关键词
HEMTs; MODFETs; Aluminum gallium nitride; Wide band gap semiconductors; Radio frequency; Substrates; Density measurement;

机译：HEMTS;MODFET;铝镓氮化镓;宽带隙半导体;射频;基板;密度测量;

相似文献

外文文献
中文文献
专利

1. Effect of GaN Channel Layer Thickness on DC and RF Performance of GaN HEMTs With Composite AlGaN/GaN Buffer [J] . Wang X., Huang S., Zheng Y., IEEE Transactions on Electron Devices . 2014,第5期

机译：GaN沟道层厚度对复合AlGaN / GaN缓冲层GaN HEMT的DC和RF性能的影响
2. Microwave noise performance of AlGaN-GaN HEMTs with small DC power dissipation [J] . Moon J.S., Micovic M., Kurdoghlian A., IEEE Electron Device Letters . 2002,第11期

机译：直流功耗小的AlGaN-GaN HEMT的微波噪声性能
3. Analysis of DC, Channel Temperature, and RF Performance of In Situ SiN/AlGaN-Sandwich-Barrier/GaN/Al₀.₀₅GaN HEMTs [J] . Yang Ling, Wu Mei, Hou Bin, IEEE Transactions on Electron Devices . 2020,第10期

机译：分析DC，通道温度和原位SIN / Algan-Sandwich-Barrier / GaN /Al₀.₀₅Ghmts的rf性能
4. Enhanced DC and RF performance of AlGaN/GaN HEMTs on CVD-Diamond in high power CW operation [C] . K. Ranjan, Ng Geok Ing, S. Arulkumaran, 2019 Electron Devices Technology and Manufacturing Conference . 2019

机译：在大功率连续波操作中，在CVD金刚石上增强了AlGaN / GaN HEMT的DC和RF性能
5. Impact of mechanical stress on AlGaN/GaN HEMT performance: Channel resistance and gate current. [D] . Koehler, Andrew Daniel. 2011

机译：机械应力对AlGaN / GaN HEMT性能的影响：沟道电阻和栅极电流。
6. Performance Optimization of Nitrogen Dioxide Gas Sensor Based on Pd-AlGaN/GaN HEMTs by Gate Bias Modulation [O] . Van Cuong Nguyen, Kwangeun Kim, Hyungtak Kim 2021

机译：基于PD-Algan / GaN HEMTS栅极偏压调制的二氧化氮气体传感器性能优化
7. Investigation of Self-Heating Effect on DC and RF Performances in AlGaN/GaN HEMTs on CVD-Diamond [O] . K. Ranjan, S. Arulkumaran, G. I. Ng, 2019

机译：CVD-钻石中Algan / GaN Hemts中直流和RF性能的自热效应研究

Enhanced DC and RF performance of AlGaN/GaN HEMTs on CVD-Diamond in high power CW operation

摘要

著录项

相似文献

相关主题

期刊订阅