Enhanced DC and RF performance of AlGaN/GaN HEMTs on CVD-Diamond in high power CW operation

机译：在大功率连续波操作中，在CVD金刚石上增强了AlGaN / GaN HEMT的DC和RF性能

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We have investigated the DC and RF performances of AlGaN/GaN HEMTs on CVD-Diamond at high power density continuous wave (CW) operating condition. About 4-times improved DC and RF performances were observed in GaN/Dia HEMTs, which was due to the lower rise in junction temperature at higher CW operating power density. This was confirmed by theoretical TCAD simulation. The improved DC and RF performance from GaN/Dia HEMTs are promising for high power density CW operating DC and RF applications.

机译：我们已经研究了在高功率密度连续波（CW）工作条件下，AlGaN / GaN HEMT在CVD金刚石上的直流和射频性能。在GaN / Dia HEMT中，观察到DC和RF性能提高了约4倍，这是由于在较高的CW工作功率密度下结温的上升幅度较小。理论上的TCAD模拟证实了这一点。 GaN / Dia HEMT改善的DC和RF性能对于高功率密度CW操作DC和RF应用是有希望的。

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来源
《2019 Electron Devices Technology and Manufacturing Conference》|2019年|97-99|共3页
会议地点 Singapore(SG)
作者
K. Ranjan; Ng Geok Ing; S. Arulkumaran; S. Vicknesh; S. C. Foo;
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作者单位

Si-COE, School of EEE, Nanyang Technological University, Singapore;

Si-COE, School of EEE, Nanyang Technological University, Singapore;

Temasek Lab@NTU, Nanyang Technological University, Singapore;

Temasek Lab@NTU, Nanyang Technological University, Singapore;

Temasek Lab@NTU, Nanyang Technological University, Singapore;

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正文语种 eng
中图分类
关键词
HEMTs; MODFETs; Aluminum gallium nitride; Wide band gap semiconductors; Radio frequency; Substrates; Density measurement;

机译：HEMT; MODFET;氮化铝镓;宽带隙半导体;射频;基板;密度测量;;

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专利

1. Effect of GaN Channel Layer Thickness on DC and RF Performance of GaN HEMTs With Composite AlGaN/GaN Buffer [J] . Wang X., Huang S., Zheng Y., IEEE Transactions on Electron Devices . 2014,第5期

机译：GaN沟道层厚度对复合AlGaN / GaN缓冲层GaN HEMT的DC和RF性能的影响
2. Microwave noise performance of AlGaN-GaN HEMTs with small DC power dissipation [J] . Moon J.S., Micovic M., Kurdoghlian A., IEEE Electron Device Letters . 2002,第11期

机译：直流功耗小的AlGaN-GaN HEMT的微波噪声性能
3. Analysis of DC, Channel Temperature, and RF Performance of In Situ SiN/AlGaN-Sandwich-Barrier/GaN/Al₀.₀₅GaN HEMTs [J] . Yang Ling, Wu Mei, Hou Bin, IEEE Transactions on Electron Devices . 2020,第10期

机译：分析DC，通道温度和原位SIN / Algan-Sandwich-Barrier / GaN /Al₀.₀₅Ghmts的rf性能
4. Enhanced DC and RF performance of AlGaN/GaN HEMTs on CVD-Diamond in high power CW operation [C] . K. Ranjan, Ng Geok Ing, S. Arulkumaran, Electron Devices Technology and Manufacturing Conference . 2019

机译：高功率CW操作中的CVD-金刚石上的AlGaN / GaN Hemts的增强直流和RF性能
5. Impact of mechanical stress on AlGaN/GaN HEMT performance: Channel resistance and gate current. [D] . Koehler, Andrew Daniel. 2011

机译：机械应力对AlGaN / GaN HEMT性能的影响：沟道电阻和栅极电流。
6. Performance Optimization of Nitrogen Dioxide Gas Sensor Based on Pd-AlGaN/GaN HEMTs by Gate Bias Modulation [O] . Van Cuong Nguyen, Kwangeun Kim, Hyungtak Kim 2021

机译：基于PD-Algan / GaN HEMTS栅极偏压调制的二氧化氮气体传感器性能优化
7. Investigation of Self-Heating Effect on DC and RF Performances in AlGaN/GaN HEMTs on CVD-Diamond [O] . K. Ranjan, S. Arulkumaran, G. I. Ng, 2019

机译：CVD-钻石中Algan / GaN Hemts中直流和RF性能的自热效应研究

Enhanced DC and RF performance of AlGaN/GaN HEMTs on CVD-Diamond in high power CW operation

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