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首页> 外文会议>Nitride semiconductors >LOW TEMPERATURE GaN GROWTH ON NITRIDATED SAPPHIRE USING REMOTE PLASMA ENHANCED ULTRAHIGH VACUUM CHEMICAL VAPOR DEPOSITION
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LOW TEMPERATURE GaN GROWTH ON NITRIDATED SAPPHIRE USING REMOTE PLASMA ENHANCED ULTRAHIGH VACUUM CHEMICAL VAPOR DEPOSITION

机译：远程等离子体增强超高真空化学气相沉积法在氮化蓝宝石上低温生长GaN

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摘要

GaN epitaxial thin films were grown on a nitridated sapphire at low temperature (550 ℃) using remote plasma enhanced ultrahigh vacuum chemical vapor deposition system and these films were investigated by Rutherford backscattering spectroscopy (RBS), X-ray diffraction(XRD) θ-rocking technique and the Ultraviolet-Visible-Nearinfrared (UV-VIS-NIR) absorption spectrum. The FWHM of the X-ray θ-rocking curve was about 0.4 degree using the (0002) reflection from the GaN layer with 5000 A thickness grown on the nitridated sapphire. An analysis of XRD and the UV-VIS-NIR absorption spectrum showed that the crystalline and optical qualities of GaN are dependent on the nitridation time of the sapphire even at low temperature when a plasma source is used for nitridation. This means that the density of protrusion, which is formed by a relaxation of the elastic energy caused by the lattice difference between the sapphire and Al_xO_(1-x)N, with the sapphire nitridation time plays a key role in the crystalline and optical properties of grown GaN films. The RBS channeling data and the FWHM value of the θ-rocking curve for GaN_(0002) also indicated that the truncated hexagonals are tilted towards each other. These results showed that the GaN epitaxial film can be successfully grown on nitridated sapphire by RPE-UHVCVD even at low temperature.
机译：使用远程等离子体增强超高真空化学气相沉积系统在低温（550℃）的氮化蓝宝石上生长GaN外延薄膜，并通过卢瑟福背散射光谱（RBS），X射线衍射（XRD）θ摇摆研究了这些薄膜。技术和紫外线-可见-近红外（UV-VIS-NIR）吸收光谱。使用来自氮化蓝宝石上生长的厚度为5000 A的GaN层的（0002）反射，X射线θ摇摆曲线的FWHM约为0.4度。对XRD和UV-VIS-NIR吸收光谱的分析表明，即使在低温下使用等离子源进行氮化时，GaN的晶体和光学性质也取决于蓝宝石的氮化时间。这意味着由蓝宝石氮化时间引起的，由蓝宝石与Al_xO_（1-x）N之间的晶格差异引起的弹性能的松弛所形成的突起密度，对蓝宝石的晶体和光学性质起着关键作用。氮化镓膜的数量。 GaN_（0002）的RBS通道数据和θ摇摆曲线的FWHM值也表明，截短的六边形相互倾斜。这些结果表明，即使在低温下，也可以通过RPE-UHVCVD在氮化蓝宝石上成功生长GaN外延膜。

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  • 来源
    《Nitride semiconductors》|1997年|161-166|共6页
  • 会议地点 Boston MA(US)
  • 作者

    DONG-JUN KIM; KYOUNG-KOOK KIM; JONG-SIK PAEK; MIN-SU YI; DO-YOUNG NOH; HYO-GUN KIM; SEONG-JU PARK;

  • 作者单位

    Department of Materials Science and Engineering, Kwangju Institute of Science and Technology, Kwangju 506-712, Korea;

    Department of Materials Science and Engineering, Kwangju Institute of Science and Technology, Kwangju 506-712, Korea;

    Department of Materials Science and Engineering, Kwangju Institute of Science and Technology, Kwangju 506-712, Korea;

    Department of Materials Science and Engineering, Kwangju Institute of Science and Technology, Kwangju 506-712, Korea;

    Department of Materials Science and Engineering, Kwangju Institute of Science and Technology, Kwangju 506-712, Korea;

    Department of Materials Science and Engineering, Kwangju Institute of Science and Technology, Kwangju 506-712, Korea;

    Department of Materials Science and Engineering, Kwangju Institute of Science and Technology, Kwan;

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  • 正文语种 eng
  • 中图分类 材料;
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