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首页> 外文会议>Nitride semiconductors >EFFECT OF MG, ZN, SI, AND O ON THE LATTICE CONSTANT OF GALLIUM NITRIDE THIN FILMS
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EFFECT OF MG, ZN, SI, AND O ON THE LATTICE CONSTANT OF GALLIUM NITRIDE THIN FILMS

机译：MG，ZN，SI和O对氮化镓薄膜晶格常数的影响

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摘要

This study analyzes the impact of most common impurities and dopants on the c lattice parameter for thin films of Gallium Nitride (GaN) deposited on basal plane sapphire. Both Mg (～10~(17) cm~(-3)) and Zn (～3 × 10~(20) cm~(-3)) doping were found to expand the c lattice parameter as much as +0.38% and +0.62%, respectively. On the contrary, Oxygen up to concentrations 9 10~(21) cm~~(-3) is shown to replace N in GaN thin films reducing the c parameter only by a small amount. Incorporation of Si leads to a large decrease of the c parameter which can not be attributed to the different size of Ga and Si atom. It is suggested that doping alters the film stoichiometry by a predicted Fermi level dependence of defect formation energies. The impact of stoichiometry on c lattice parameter and the effect of hydrostatic strain on resistivity in undoped and doped GaN is discussed.
机译：本研究分析了最常见的杂质和掺杂剂对沉积在基面蓝宝石上的氮化镓（GaN）薄膜的c晶格参数的影响。发现Mg（〜10〜（17）cm〜（-3））和Zn（〜3×10〜（20）cm〜（-3））掺杂都使c晶格参数扩展了+ 0.38％和分别为+ 0.62％。相反，显示浓度高达9 10〜（21）cm ~~（-3）的氧气替代了GaN薄膜中的N，仅使c参数降低了少量。 Si的掺入导致c参数的大幅降低，这不能归因于Ga和Si原子的不同尺寸。建议掺杂通过缺陷形成能量的预测的费米能级依赖性来改变膜的化学计量。讨论了化学计量对c晶格参数的影响以及静应变对未掺杂和掺杂GaN中电阻率的影响。

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  • 来源
    《Nitride semiconductors》|1997年|525-530|共6页
  • 会议地点 Boston MA(US)
  • 作者

    G. S. Sudhir; Y. Peyrot; J. Krueger; Y. Kim; R. Klockenbrink; C. Kisielowski; M. D. Rubin; E. R. Weber; W. Kriegseis; B. K. Meyer;

  • 作者单位

    MSME Department, U. C. Berkeley, Berkeley, CA 94720;

    MSME Department, U. C. Berkeley, Berkeley, CA 94720;

    MSME Department, U. C. Berkeley, Berkeley, CA 94720;

    MSME Department, U. C. Berkeley, Berkeley, CA 94720;

    MSME Department, U. C. Berkeley, Berkeley, CA 94720;

    MSME Department, U. C. Berkeley, Berkeley, CA 94720;

    Materials Science Division, Lawrence Berkeley National Laboratory, Berkeley, CA 94720;

    MSME Department, U. C. Berkeley, Berkeley, CA 94720 Materials Science Division, Lawrence Berkeley National Laboratory, Berkeley, CA 94720;

    Justus-Liebig-Universitt Giessen, Heinrich-Buff-Ring 16, D-35392 Giessen, Germany;

    Justus-Liebig-Universitt Giessen, Heinrich-Buff-Ring 16, D-35392 Giessen, Germany;

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  • 正文语种 eng
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