PHOTOQUENCHING OF PERSISTENT PHOTOCONDUCTIVITY IN N-TYPE GaN

著录项

• 来源
  《Nitride semiconductors》|1997年|531-536|共6页
• 会议地点 Boston MA(US)
• 作者

  Michele T. Hirsch; O. Seifert; O. Kirfel; J. Parisi; J. A. Wolk; W. Walukiewicz; E. E. Haller; O. Ambacher; M. Stutzmann;

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• 作者单位

  Department of Physics, University of Oldenburg, D-26111 Oldenburg, Germany;

  Department of Physics, University of Oldenburg, D-26111 Oldenburg, Germany;

  Department of Physics, University of Oldenburg, D-26111 Oldenburg, Germany;

  Department of Physics, University of Oldenburg, D-26111 Oldenburg, Germany;

  Lawrence Berkeley National Laboratory, Berkeley, California 94720, USA;

  Lawrence Berkeley National Laboratory, Berkeley, California 94720, USA;

  Lawrence Berkeley National Laboratory, Berkeley, California 94720, USA Department of Materials Science and Mineral Engineering, University of California, Berkeley, California 94720, USA;

  Walter Schottky Institute, Technical University Munich, D-85748 Garching, Germany;

  Walter Schottky Institute, Technical University Munich, D-85748 Garching, Germany;

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• 会议组织
• 原文格式 PDF
• 正文语种 eng
• 中图分类 材料;
• 关键词