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THE CORE STRUCTURE OF PURE EDGE THREADING DISLOCATIONS IN GaN LAYERS GROWN ON 0001 SiC OR SAPPHIRE BY MBE

机译：MBE在0001 SiC或蓝宝石上生长的GaN层中纯边缘螺纹错位的核心结构

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The best layers of GaN grown on SiC or sapphire contain high densities of threading dislocations, which do not seem to exhibit a critically important electrical activity. It is possible that the electrical activity of these dislocations may change with time. The large majority of the threading dislocations are a type, with 1/3 < 1120 > Burgers vector and their line parallel to the [0001] growth direction. The atomic structure of the a threading dislocations was found to correspond to 5/7 or 8 atoms rings core with rather equal frequency. The 8 atoms ring cores contain dangling bonds and will present favourable sites for atomic impurities which eventuallly can modify the good performances of the devices.

机译：在SiC或蓝宝石上生长的GaN最佳层包含高密度的位错，这似乎没有表现出至关重要的电活性。这些位错的电活动可能会随时间变化。绝大多数的螺纹位错是一种类型，其1/3 <1120> Burgers向量且其线平行于[0001]生长方向。发现一个位错的原子结构对应于频率相当相等的5/7或8个原子环核。 8个原子的环芯包含悬空键，并且会为原子杂质提供有利的位置，最终会改变器件的良好性能。

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《Nitride semiconductors》|1997年|459-464|共6页
会议地点 Boston MA(US)
作者
P. RUTERANA; V. POTIN; G. NOUET;
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作者单位

Laboratoire d'Etudes et de Recherches sur les Materiaux, Institut des Sciences de la Matiere et du Rayonnement, UPRESA-CNRS 6004, 6 Bd du Marshal Juin 14050 Caen Cedex France;

Laboratoire d'Etudes et de Recherches sur les Materiaux, Institut des Sciences de la Matiere et du Rayonnement, UPRESA-CNRS 6004, 6 Bd du Marshal Juin 14050 Caen Cedex France;

Laboratoire d'Etudes et de Recherches sur les Materiaux, Institut des Sciences de la Matiere et du Rayonnement, UPRESA-CNRS 6004, 6 Bd du Marshal Juin 14050 Caen Cedex France;

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1. Defect-rich GaN interlayer facilitating the annihilation of threading dislocations in polar GaN crystals grown on (0001)-oriented sapphire substrates [J] . Barchuk M., Motylenko M., Schneider T., Journal of Applied Physics . 2019,第8期

机译：富含缺陷的GaN中间层，有助于消除在（0001）取向的蓝宝石衬底上生长的极性GaN晶体中的位错
2. Defect reduction in GaN epilayers and HFET structures grown on (0001) sapphire by ammonia MBE [J] . James B.Webb, H.Tang, J.A.Bardwell Journal of Crystal Growth . 2001,第3a4期

机译：氨MBE减少（0001）蓝宝石上生长的GaN外延层和HFET结构的缺陷
3. Characterizations of GaN films and GaN/AlN super-lattice structures grown on vicinal sapphire (0001) substrates by RF-MBE [J] . Shen XQ, Shimizu M, Yamamoto T, Journal of Crystal Growth . 2005,第1a4期

机译：RF-MBE对在邻近蓝宝石（0001）衬底上生长的GaN膜和GaN / AlN超晶格结构进行表征
4. THE CORE STRUCTURE OF PURE EDGE THREADING DISLOCATIONS IN GaN LAYERS GROWN ON 0001 SiC OR SAPPHIRE BY MBE [C] . Symposium on nitride semiconductors . 1998

机译：GaN层中纯边缘脱位的核心结构在0001 SiC或MBE的蓝宝石上
5. Determination via luminescence spectroscopy and x-ray diffraction of the strain and composition of GaN and Al(x)Ga(1-x)N thin films grown on 6H-SiC(0001) substrates. [D] . Perry, William George. 1997

机译：通过发光光谱和X射线衍射测定在6H-SiC（0001）衬底上生长的GaN和Al（x）Ga（1-x）N薄膜的应变和组成。
6. Ultralow threading dislocation density in GaN epilayer on near-strain-free GaN compliant buffer layer and its applications in hetero-epitaxial LEDs [O] . Huan-Yu Shih, Makoto Shiojiri, Ching-Hsiang Chen, -1

机译：接近无应变的GaN兼容缓冲层上GaN外延层中的超低穿线位错密度及其在异质外延LED中的应用
7. Defect-rich GaN interlayer facilitating the annihilation of threading dislocations in polar GaN crystals grown on (0001)-oriented sapphire substrates [O] . M. Barchuk, M. Motylenko, T. Schneider, 2019

机译：富含缺陷的GaN中间层，促进在（0001）的蓝宝石底板上生长的极性GaN晶体中的螺纹脱位湮灭
8. Effect of Threading Screw and Edge Dislocations on Transport Properties of 4H-SiC Homoepitaxial Layers [R] . Maximenko, S. I., Freitas, J. J., Myers-Ward, R. L., 2010

机译：螺纹螺纹和刃口位错对4H-siC同质外延层输运性能的影响

THE CORE STRUCTURE OF PURE EDGE THREADING DISLOCATIONS IN GaN LAYERS GROWN ON 0001 SiC OR SAPPHIRE BY MBE

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