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首页> 外文会议>Silicon carbide and related materials 2012 >Effect of damage removal treatment after trench etching on the reliability of trench MOSFET
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Effect of damage removal treatment after trench etching on the reliability of trench MOSFET

机译：沟槽刻蚀后的损伤去除处理对沟槽MOSFET可靠性的影响

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摘要

Guaranteeing the reliability of gate oxides is one of the most important topics to realize regarding the SiC power MOSFET [1] [2]. In the case of trench MOSFET, since the gate oxides are formed on the trench sidewall, the damage and roughness on the trench sidewall can affect the lifetime of the gate oxides. Generally speaking, damage removal treatment is processed after trench dry etching in most cases. In Si processes, sacrificial oxidation, H_2 anneal and chemical dry etching (CDE) are adopted commonly. In the case of SiC processes, sacrificial oxidation, H_2 anneal, and SiH_4/Ar anneal have been reported. Neverthless CDE which applied to SiC trench MOSFET has few precedents. We clarified the effect of CDE as a damage removal process. CDE has the effect of flattening the trench sidewall, and CDE makes the lifetime of gate oxides improve. CDE is an effective process for the reliability of SiC trench MOSFET.
机译：关于SiC功率MOSFET [1] [2]，确保栅极氧化物的可靠性是最重要的主题之一。在沟槽MOSFET的情况下，由于栅极氧化物形成在沟槽侧壁上，因此沟槽侧壁上的损坏和粗糙度会影响栅极氧化物的寿命。一般而言，在大多数情况下，在沟槽干蚀刻之后进行损伤去除处理。在硅工艺中，通常采用牺牲氧化，H_2退火和化学干法蚀刻（CDE）。对于SiC工艺，已经报道了牺牲氧化，H_2退火和SiH_4 / Ar退火。不过，应用于SiC沟槽MOSFET的CDE尚无先例。我们阐明了CDE作为消除损害过程的效果。 CDE具有使沟槽侧壁变平的作用，并且CDE可以提高栅氧化物的寿命。 CDE是提高SiC沟槽MOSFET可靠性的有效方法。

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  • 来源
  • 会议地点 St. Petersburg(RU)
  • 作者

    S. Mivahara; H. Watanabe; T. Yamamoto; K. Tsuruta; S. Onda; N. Soejima; Y. Watanabe; J. Morimoto;

  • 作者单位

    DENSO CORPORATION, 500-1, Minamiyama, Komenoki-cho, Nissin-shi, Aichi, Japan;

    DENSO CORPORATION, 500-1, Minamiyama, Komenoki-cho, Nissin-shi, Aichi, Japan;

    DENSO CORPORATION, 500-1, Minamiyama, Komenoki-cho, Nissin-shi, Aichi, Japan;

    DENSO CORPORATION, 500-1, Minamiyama, Komenoki-cho, Nissin-shi, Aichi, Japan;

    DENSO CORPORATION, 500-1, Minamiyama, Komenoki-cho, Nissin-shi, Aichi, Japan;

    Toyota Central RD Labs. Inc., Nagakute-shi, Aichi, Japan;

    Toyota Central RD Labs. Inc., Nagakute-shi, Aichi, Japan;

    Toyota Motor Corporation, 543, Kirigahora, Nishihirose-cho, Toyota-shi, Aichi, Japan;

  • 会议组织
  • 原文格式 PDF
  • 正文语种 eng
  • 中图分类
  • 关键词

    MOSFET; Trench; Sidewall; Chemical Dry Etching (CDE); TDDB; Reliability; TDDB;

    机译：MOSFET; nch侧壁;化学干蚀刻（CDE）； TDDB；可靠性;时区数据库;

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