Chloride-based dry etching process in 6H-SiC

机译：6H-SiC中基于氯的干法刻蚀工艺

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A chloride-based RIE-process with Cl_2/SiCl_4O_2 and an inert gas like Ar or N_2 with etch rates of up to 190 nm/min for 6H-SiC will be presented. In our etch process, a SiO_2 mask patterning has been adapted and SiC/SiO_2 etch rate ratios of about 7 have been obtained. This process produces trenches exhibiting widths of less than 3.0 μm. The narrow trenches can be refilled by the deposition of a CVD-SiO_2.

机译：将介绍一种基于Cl_2 / SiCl_4O_2和惰性气体（如Ar或N_2）的氯化物RIE工艺，其对6H-SiC的蚀刻速率高达190 nm / min。在我们的蚀刻工艺中，已经对SiO_2掩模图案进行了调整，并且SiC / SiO_2的蚀刻速率比约为7。该过程产生宽度小于3.0μm的沟槽。可以通过沉积CVD-SiO_2重新填充狭窄的沟槽。

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《Silicon carbide and related materials》|1993年|695-698|共4页
会议地点 Washington DC(US);Washington DC(US)
作者
E. Niemann; A. Boos; D. Leidich;
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作者单位

Daimler-Benz AG Research Institute Goldsteinstrasse 235, 60528 Frankfurt/Main, Germany;

Daimler-Benz AG Research Institute Goldsteinstrasse 235, 60528 Frankfurt/Main, Germany;

Daimler-Benz AG Research Institute Goldsteinstrasse 235, 60528 Frankfurt/Main, Germany;

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原文格式 PDF
正文语种 eng
中图分类硅酸盐工业;无机质材料;
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Chloride-based dry etching process in 6H-SiC

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