The dynamic change of the dangling bond (db) intensity in hydrogenated amorphous silicon (a-Si:H) during H_2 and Ar plasma treatments was observed using an in-situ electron-spin-resonance (ESR) technique. The experimental results show that the time to reach the steady state between gas-phase H atoms and the a-Si:H surface is less than 1 sec, and Ar plasma treatments create a top-surface region with an extremely high db density.
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