Cryogenic and high temperature performance of 4H-SiC power MOSFETs

机译：4H-SiC功率MOSFET的低温和高温性能

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The electrical performance of 4H-SiC Power MOSFETs is studied at temperatures from 93K to 473K. With the decrease of operation temperature, the threshold voltage is found to increase linearly whereas the on-resistance shows a minimum value within the whole temperature range. The rapid increase of on-resistance at lower temperature is ascribed to the presence of large densities of interface traps at the SiC/SiO2 interface. In addition, the breakdown voltage is also measured down to 93K and found to increase monotonously with temperature. A set of parameters, determining the breakdown voltage of 4H-SiC MOSFET at different temperatures, is put forward in this paper, by fitting the experimental data.

机译：研究了4H-SiC功率MOSFET在93K至473K温度下的电性能。随着工作温度的降低，发现阈值电压线性增加，而导通电阻在整个温度范围内显示为最小值。较低温度下导通电阻的快速增加归因于SiC / SiO 2 界面处存在大密度的界面陷阱。此外，击穿电压也可低至93K，并随温度单调增加。通过拟合实验数据，提出了确定4H-SiC MOSFET在不同温度下的击穿电压的一组参数。

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《Twenty-Eighth Annual IEEE Applied Power Electronics Conference and Exposition》|2013年|207-210|共4页
会议地点 Long Beach CA(US);Long Beach CA(US)
作者
Chen Sizhe; Cai Chaofeng; Wang Tao; Guo Qing;
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College of Electrical Engineering, Zhejiang University, Hangzhou, Chinac;

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正文语种 eng
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1. Static Performance of 20 A, 1200 V 4H-SiC Power MOSFETs at Temperatures of -187 deg C to 300 deg C [J] . LIN CHENG, ANANT K. AGARWAL, SARIT DHAR, Journal of Electronic Materials . 2012,第5期

机译：在-187摄氏度至300摄氏度的温度下20 A，1200 V 4H-SiC功率MOSFET的静态性能
2. Static Performance of 20 A, 1200 V 4H-SiC Power MOSFETs at Temperatures of −187°C to 300°C [J] . Lin Cheng, Anant K. Agarwal, Sarit Dhar, Journal of Electronic Materials . 2012,第5期

机译：在−187°C至300°C的温度下20 A，1200 V 4H-SiC功率MOSFET的静态性能
3. Comprehensive Characterization of the 4H-SiC Planar and Trench Gate MOSFETs From Cryogenic to High Temperature [J] . Tian Kai, Hallen Anders, Qi Jinwei, IEEE Transactions on Electron Devices . 2019,第10期

机译：从低温到高温的4H-SiC平面和沟槽栅极MOSFET的综合特性
4. Cryogenic and high temperature performance of 4H-SiC power MOSFETs [C] . Chen Sizhe, Cai Chaofeng, Wang Tao, Annual IEEE Applied Power Electronics Conference and Exposition . 2013

机译：低温和高温性能的4H-SIC功率MOSFET
5. Design, Analysis, and Optimization of 1.2 kV 4H-SiC Planar-Gate Power MOSFETs for Improved High Frequency Switching [D] . Han, Kijeong. 2019

机译：1.2 kV 4H-SiC平面栅极功率MOSFET的设计，分析和优化，用于改进的高频切换
6. Performance Comparison of SOI-Based Temperature Sensors for Room-Temperature Terahertz Antenna-Coupled Bolometers: MOSFET PN Junction Diode and Resistor [O] . Durgadevi Elamaran, Yuya Suzuki, Hiroaki Satoh, 2020

机译：房间温度Terhertz天线耦合钻孔SOI基温度传感器的性能比较：MOSFETPN结二极管和电阻器
7. Influence of temperature and dimension in a 4H-SiC vertical power MOSFET [O] . M H Alqaysi, A Martinez, B Ubochi, 2020

机译：温度和尺寸在4H-SIC垂直功率MOSFET中的影响
8. Electrical and Thermal Performance of 1200 V, 100 A, 200 deg C, 4H-SiC MOSFET-based Power Switch Modules [R] . Scofield, J., Merrett, N., Richmond, J., 2009

机译：基于1200 V，100 a，200°C，4H-siC mOsFET的电源开关模块的电气和热性能

Cryogenic and high temperature performance of 4H-SiC power MOSFETs

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