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首页> 外文期刊>International Journal of Mechatronics and Automation >Fabrication and characterisation of RF MEMS capacitive switches tuned for X and Ku bands
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Fabrication and characterisation of RF MEMS capacitive switches tuned for X and Ku bands

机译：RF MEMS电容开关的制造与表征，用于X和KU频段

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摘要

Microelectromechanical systems (MEMS) capacitive switches discussed in this paper employ electrostatic actuation to perform switching. Capacitive switches employ inductive tuning for excellent switching characteristics in X and Ku bands. Employing inductive tuning is found to increase the switch beam inductance by a few tens of pico-henry. This enhances the Q factor and enables tuning of isolation over a narrow band of frequencies. Beam inductance can be extracted from the simulated isolation characteristics of the switch by curve fitting. This paper presents design, fabrication and characterisation of inductive tuned MEMS capacitive switches tuned for X and Ku bands. The devices are fabricated on high resistive (10 KΩ) silicon substrate by a five mask process. The characterisation of the fabricated devices are conducted using Cascade probe station and high frequency Power network analyser. Characterisation results show an actuation voltage of 18.5 volts. The insertion - loss and isolation are better than 0.5 dB and -40 dB respectively in the 8-18 GHz band.
机译：本文讨论的微机电系统（MEMS）电容开关采用静电驱动来执行切换。电容开关采用X和KU带中出色的开关特性的电感调整。发现使用电感调谐将开关光束电感增加几十多个微微亨利。这增强了Q因子，并能够在窄频带上调谐隔离。可以通过曲线配件从开关的模拟隔离特性提取光束电感。本文介绍了用于X和KU带的电感调谐MEMS电容开关的设计，制造和表征。该装置通过五个掩模工艺在高电阻（10kΩ）硅衬底上制造。使用级联探头站和高频电网分析仪进行制造装置的表征。表征结果显示出18.5伏的致动电压。插入损耗和隔离分别在8-18GHz波段中分别优于0.5dB和-40 dB。

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