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首页> 外文期刊>Metrologia: International Journal of Scientific Metrology: = Internationale Zeitschrift fur Wissenschaftliche Metrologie: = Journal International de Metrologie Scientifique >A method to determine the interface position and layer thickness in SIMS depth profiling of multilayer films
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A method to determine the interface position and layer thickness in SIMS depth profiling of multilayer films

机译：多层膜SIMS深度剖析中确定界面位置和层厚度的方法

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摘要

The measurement of layer thickness by compositional secondary ion mass spectrometry (SIMS) depth profiling is investigated for Si/Ge multilayer films using an oxygen ion beam. The original SIMS depth profiles were converted into compositional depth profiles by the relative sensitivity factors of Si and Ge derived from a Si_(52.4)Ge_(47.6) alloy reference film. The locations of the interfaces in the Si/Ge multilayer films could be well determined by 50 atpercent definition where the relative composition of the constituent layer elements drops or rises to 50 atpercent. The layer thicknesses of Si and Ge of a test Si/Ge multilayer film were determined by the sputtering rates of Si and Ge determined from a reference Si/Ge multilayer film. Although the difference between the measured and the actual thicknesses is increased as the ion energy is increased, the layer thicknesses determined at low ion energies were very close to the actual values.
机译：研究了使用氧离子束对Si / Ge多层膜通过成分二次离子质谱（SIMS）深度剖析进行的层厚度测量。通过从Si_（52.4）Ge_（47.6）合金参考膜得出的Si和Ge的相对灵敏度因子，将原始SIMS深度轮廓转换为成分深度轮廓。 Si / Ge多层膜中界面的位置可以通过50％的定义很好地确定，其中组成层元素的相对组成下降或上升到50％。通过从参考Si / Ge多层膜确定的Si和Ge的溅射速率来确定测试Si / Ge多层膜的Si和Ge的层厚度。尽管随着离子能量的增加，测量厚度与实际厚度之间的差异也会增加，但在低离子能量下确定的层厚度却非常接近实际值。

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