Determination of the Silicon Film Thickness and Back Oxide Charge Density on Graded-Channel SOI NMOSFETs

机译：梯度沟道SOI NMOSFET上硅膜厚度和背氧化电荷密度的确定

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This work presents the improved method for extraction of silicon film thickness and the back oxide charge density on fully depleted GC SOI NMOSFETs, which are important parameters affecting the device operation. The proposed method exploits the influence of the back gate voltage on the front channel current regime. Numerical bidimensional simulations were used to support the analysis and the method was applied experimentally.

机译：这项工作提出了一种改进的方法，用于在完全耗尽的GC SOI NMOSFET上提取硅膜厚度和背氧化电荷密度，这是影响器件工作的重要参数。所提出的方法利用了背栅电压对前沟道电流状态的影响。二维数值模拟被用来支持该分析，并且该方法被实验地应用。

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《18th Symposium on Microelectronics Technology and Devices; 16th Symposium on Integrated Circuits and System Design; Sep 8-11, 2003; Sao Paulo, Brazil》|2003年|p.147-155|共9页
会议地点 Sao Paulo(BR);Sao Paulo(BR);Sao Paulo(BR);Sao Paulo(BR)
作者
A. S. NICOLETT; J. A. MARTINO; M. A. PAVANELLO;
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Laboratorio de Sistemas Integraveis -Universidade de Sao Paulo, Brazil;

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原文格式 PDF
正文语种 eng
中图分类无线电电子学、电信技术;
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1. Hot-carrier degradation behavior of thin-film SOI nMOSFET with isolation scheme and buried oxide thickness [J] . Jong-Wook Lee, Hyung-Ki Kim IEEE Transactions on Electron Devices . 2000,第5期

机译：具有隔离方案和掩埋氧化物厚度的薄膜SOI nMOSFET热载流子退化行为
2. Threshold voltage dependence of LOCOS-isolated thin-film SOI NMOSFET on buried oxide thickness [J] . Jong-Wook Lee, Hyung-Ki Kim IEEE Electron Device Letters . 1999,第9期

机译：LOCOS隔离的薄膜SOI NMOSFET的阈值电压对掩埋氧化物厚度的依赖性
3. X-ray measurements of nanometer-thick tantalum oxide and hafnium oxide films on silicon substrates for thickness and composition determination [J] . F.J.Cadieu, I.Vander, Y.Rong, Powder diffraction . 2012,第2期

机译：X射线测量硅基板上纳米厚的氧化钽和氧化ha薄膜的厚度和成分
4. INFLUENCE OF THE GATE OXIDE TUNNELING EFFECT ON THE EXTRACTION OF THE SILICON FILM AND FRONT OXIDE THICKNESS IN SOI nMOSFET [C] . A. G. PAIOLA, A. S. NICOLETT, J. A. MARTINO Proceedings vol.2005-08; International Symposium on Microelectronics Technology and Devices(SBMICRO 2005); 200509; . 2005

机译：栅隧穿效应对SOI nMOSFET中硅膜和前氧化膜厚度的提取的影响
5. A study of particle formation and transport during thermal chemical vapor deposition (CVD) of silicon dioxide films and high-density plasma CVD of poly silicon films. [D] . Kim, Taesung. 2002

机译：对二氧化硅膜的热化学气相沉积（CVD）和多晶硅膜的高密度等离子体CVD过程中颗粒形成和传输的研究。
6. Thickness-dependent optimization of Er3+ light emission from silicon-rich silicon oxide thin films [O] . Sébastien Cueff, Christophe Labbé, Olivier Jambois, 2011

机译：富硅氧化硅薄膜中Er3 +发光的厚度依赖性优化
7. Thickness-dependent optimization of Er3+ light emission from silicon-rich silicon oxide thin films [O] . Sébastien Cueff, Christophe Labbé, Olivier Jambois, 2011

机译：富硅氧化硅薄膜中Er3 +发光的厚度依赖性优化
8. Oxide Charge Characteristics of Low Temperature MOS (Metal-Oxide-Silicon) Oxide Films [R] . Butler, S. R., Feigl, F. J. 1984

机译：低温mOs（金属氧化物 - 硅）氧化物薄膜的氧化物电荷特性

Determination of the Silicon Film Thickness and Back Oxide Charge Density on Graded-Channel SOI NMOSFETs

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