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首页> 外文会议>2016 IEEE 37th International Electronics Manufacturing Technology amp; 18th Electronics Materials and Packaging Conference >Comprehensive study to enable successful probing of GaN wafer technology
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Comprehensive study to enable successful probing of GaN wafer technology

机译：全面研究以成功探测GaN晶圆技术

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摘要

The power MOSFET wafers which base on silicon substrates are almost reaching end of road, lacking on both performance and cost. It was widely predicted in the industry that next generation wafers should come from Gallium Nitride (GaN) substrate. This new material is expected to be the dominant technology due to its competitive in almost all aspects. Many high power device providers are making deep dive efforts, hopefully to penetrate market earlier than all other competitors. The challenges in achieving that target include facing some of the strangest issues. One of the issues faced in GaN HEMT wafer is not able to perform proper testing as it is a normally-on device. A lot of efforts were invested into developing breakthrough probing process in order to determine quality of device before going into assembly packaging. In the process to develop robust probing methodology, there were many quality occurrences and concerns. Multiple rounds of evaluations were executed and finally obtained few robust options. Upon actual verifications, a new improved probing methodology was selected. It could provide reasonable and reliable measuring performance while concluding new circuits should be redesigned at wafer level. With this new probing method, time to market could reach extremely good performance, enabling competitive advantage in market penetration.
机译：基于硅衬底的功率MOSFET晶片几乎快要走到尽头了，缺乏性能和成本。业界普遍预测，下一代晶圆应来自氮化镓（GaN）衬底。由于这种新材料几乎在所有方面都具有竞争力，因此有望成为主导技术。许多大功率设备提供商都在进行深入的研究，希望比所有其他竞争对手更早地进入市场。实现该目标的挑战包括面临一些最奇怪的问题。 GaN HEMT晶圆面临的问题之一是无法正常执行测试，因此无法执行适当的测试。为了在组装包装之前确定设备的质量，人们投入了大量精力来开发突破性的探测过程。在开发可靠的探测方法的过程中，存在许多质量问题和关注点。执行了多轮评估，最终获得了一些健壮的选择。经过实际验证，选择了一种新的改进的探测方法。它可以提供合理和可靠的测量性能，同时得出结论，应在晶圆级重新设计新电路。使用这种新的探测方法，上市时间可以达到极佳的性能，从而在市场渗透方面获得竞争优势。

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