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首页> 外文会议>Electrochemical Society Meeting and International Symposium on ULSI Process Integration III; 20030428-20030502; Paris; FR >HIGH-VOLT AGE CMOS AND SCALING TRENDS
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HIGH-VOLT AGE CMOS AND SCALING TRENDS

机译：高电压时代的CMOS和缩放趋势

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摘要

The continuous increase of transistor density in ULSI integrated circuits (IC) drives the decrease of the maximum supply voltage in modern CMOS technologies. While such technologies are optimized for higher speed and lower power consumption, they cannot serve applications where high-voltage capabilities are required. High-voltage technologies are dedicated to fill this gap by combining low-voltage and high-voltage features on the same substrate, at the expense of a lower integration density. Different combinations are possible depending on the application requirements in terms of voltage and current ratings. High-voltage CMOS technologies are widely used in applications such as flat panel displays where the voltage range is between 10V and 100V but the current is low. Smart Power and BCD (Bipolar, CMOS and DMOS) technologies are more dedicated for power applications with high currents such as motor drivers. This paper focuses on the architecture and scaling of high-voltage CMOS technologies for flat panel Liquid Crystal Display (LCD) drivers.
机译：ULSI集成电路（IC）中晶体管密度的不断提高，导致现代CMOS技术中最大电源电压的降低。尽管此类技术针对更高的速度和更低的功耗进行了优化，但它们不能用于需要高压功能的应用。高压技术致力于通过在同一基板上组合低压和高压功能来填补这一空白，但以降低集成密度为代价。根据电压和电流额定值的应用要求，可以使用不同的组合。高压CMOS技术广泛用于平板显示器等应用，这些应用的电压范围在10V至100V之间，但电流较低。智能电源和BCD（双极，CMOS和DMOS）技术更专用于大电流电源应用，例如电机驱动器。本文重点介绍用于平板液晶显示器（LCD）驱动器的高压CMOS技术的体系结构和缩放比例。

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