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Atomic Layer Deposition of Metal Oxides for Emerging Applications

机译：新兴应用中金属氧化物的原子层沉积

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摘要

Atomic layer deposition (ALD) is a vapor phase thin film deposition technique that offers excellent control on film thickness and composition and superior conformality. This thesis focuses on the development of a novel portable ALD/Chemical vapor deposition (CVD) hybrid reactor, reactor control architecture and applicability of ALD in different emerging application areas. Design aspects of the portable reactor and its scalable LabVIEW control program are described and discussed in detail. ALD of titanium oxide and CVD of tin oxide were used to test and optimize the hybrid reactor. A novel ethanol based ALD process was developed for selective ALD (SALD) of metal oxides. The SALD process is unique in that no lithography or patterning techniques are needed for selective deposition. SALD of ZrO2 was carried out on copper patterned silicon substrates using ethanol as the oxygen source. Ethanol served as ALD oxygen source on the silicon side and copper reducing agent on the copper side of the substrate. The ethanol based SALD process was able to prevent ALD deposition on copper side up to at least 70 ALD cycles. Ethanol based ALD process was then further studied for deposition of hafnium oxide for high-k applications. HfO 2 films showed leakage current density of 5 x 10-8 A/cm2 at 1 V gate bias, which is comparable to films prepared using water based ALD process.;ALD of tin oxide was studied for transparent conducting oxide application, often used in optoelectronic devices. The ALD was performed using tin(II)acetylacetonate as a new tin precursor and ozone as the oxygen source. Linear growth rate of 0.1 nm/cycle was achieved within ALD temperature window (175 to 300 °C). Resistivity of the films was in the order of 0.3 O-cm. ALD of Sn-doped TiO2 was then studied for photoactivated disinfection of biomedical implants. In this study, atomic layer deposited ultra-thin films (~15 nm) of tin-doped titanium oxide showed excellent antibacterial activity. Up to 98.5% disinfection was achieved within 3 min of low intensity UV exposure at a bacterial killing rate of 18 million/min-cm2 of implant surface.
机译：原子层沉积（ALD）是一种气相薄膜沉积技术，可提供对膜厚度和成分的出色控制以及出色的保形性。本文的重点是新型便携式ALD /化学气相沉积（CVD）混合反应器的开发，反应器控制架构以及ALD在不同的新兴应用领域中的适用性。详细描述了便携式反应器及其可扩展的LabVIEW控制程序的设计方面。氧化钛的ALD和氧化锡的CVD用于测试和优化混合反应器。开发了一种基于乙醇的新型ALD工艺，用于金属氧化物的选择性ALD（SALD）。 SALD工艺的独特之处在于，无需光刻或构图技术即可进行选择性沉积。 ZrO2的SALD使用乙醇作为氧源在铜构图的硅基板上进行。乙醇在基板的硅侧用作ALD氧源，在铜的铜侧用作铜还原剂。基于乙醇的SALD工艺能够至少在70个ALD周期内防止ALD在铜侧的沉积。然后，对乙醇基ALD工艺进行了进一步研究，以沉积用于高k应用的氧化deposition。 HfO 2薄膜在1 V栅极偏压下显示出5 x 10-8 A / cm2的漏电流密度，这与使用水基ALD工艺制备的薄膜相当。氧化锡的ALD被研究用于透明导电氧化物的应用，通常用于光电设备。 ALD是使用乙酰丙酮锡（II）作为新的锡前体，并使用臭氧作为氧源进行的。在ALD温度窗口（175至300°C）内，线性增长速率为0.1 nm /循环。膜的电阻率约为0.3O-cm。然后研究了掺杂Sn的TiO2的ALD用于生物医学植入物的光活化消毒。在这项研究中，原子层沉积的锡掺杂二氧化钛超薄膜（〜15 nm）显示出优异的抗菌活性。在低强度紫外线照射下3分钟内，植入物表面的细菌杀死率为1800万/ min-cm2，消毒率高达98.5％。

著录项

  • 作者

    Selvaraj, Sathees Kannan.;

  • 作者单位

    University of Illinois at Chicago.;

  • 授予单位 University of Illinois at Chicago.;
  • 学科 Chemical engineering.
  • 学位 Ph.D.
  • 年度 2015
  • 页码 149 p.
  • 总页数 149
  • 原文格式 PDF
  • 正文语种 eng
  • 中图分类 遥感技术;
  • 关键词

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