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首页> 外文期刊>Crystal growth & design >Study of morphological and related properties of aligned zinc oxide nanorods grown by vapor phase transport on chemical bath deposited buffer layers
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Study of morphological and related properties of aligned zinc oxide nanorods grown by vapor phase transport on chemical bath deposited buffer layers

机译：气相沉积在化学浴沉积缓冲层上生长的取向氧化锌纳米棒的形貌及相关特性的研究

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c-axis aligned ZnO nanorods were deposited by vapor phase transport on textured chemical bath deposited buffer layers. In this work, we examine the role of the buffer layer and how it influences the vapor phase transport deposition process using both scanning and transmission electron microscopes and related techniques. Vapor phase transport deposition on chemical bath deposited buffer layers is a complex growth process with many simultaneously occurring effects including (i) substantial morphological transformation at high temperature, which influences the base of the nanorods; (ii) the formation of a mixed amorphous/crystalline Zn_xSi_(1-x)O_y interface during the vapor phase transport growth on silicon substrates; (iii) the overgrowth of the ZnO seed layers by the silica interface rendering them inactive for nanorod nucleation, suggesting there is a minimum critical thickness ZnO buffer layer necessary for vapor phase transport growth of ZnO nanorods on silicon substrates. We discuss the relative importance of these effects on the overall growth process and use this understanding to explain previous results in the literature.
机译：通过气相传输将c轴对齐的ZnO纳米棒沉积在织构的化学浴沉积缓冲层上。在这项工作中，我们使用扫描和透射电子显微镜以及相关技术研究了缓冲层的作用及其对气相传输沉积过程的影响。气相沉积在化学浴沉积缓冲层上的气相沉积是一个复杂的生长过程，具有许多同时发生的效应，其中包括：（i）高温下的实质形态转变，这会影响纳米棒的基底; （ii）在硅衬底上的气相传输生长期间形成混合的非晶/晶体Zn_xSi_（1-x）O_y界面; （iii）ZnO晶种层由于二氧化硅界面而过度生长，从而使它们对于纳米棒成核不起作用，这表明存在最小临界厚度的ZnO缓冲层，这是在硅基板上气相生长ZnO纳米棒所必需的。我们讨论了这些影响对整个增长过程的相对重要性，并以此理解来解释文献中的先前结果。

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