Phase Formation in Ti (Ta)-Ni and Co-Ti Films Deposited on (001)Si in N_2 Atmospheres

机译：N_2气氛中（001）Si上沉积的Ti（Ta）-Ni和Co-Ti膜的相形成

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A series of electron microscopy investigations on the microstructure produced by surface-diffusion reactions between Si substrates heated to 700-800℃ and Ti-Co, Ti-Ni or Ta-Ni alloys deposited in a nitrogen ambient with and without barrier layers are described. The TEM data show clear phase separation into TaSi_2 and NiSi_2 for the Ta-Ni film deposited in a high N_2 pressure ambient. Deposition at lower N_2 pressure led to the formation of a mixed Ni-Ta-Si layer. The phase separation effect was also absent for Ni-Ti films even at high N_2 pressure. The presence of barrier layers strongly affected the surface diffusion reactions in the Co-Ti-Si system. Formation of Ti-(O) or CoSi_x amorphous layers at the Si surface prevented the interdiffusion of Si and Co, such that even pure Co or Co_2Si layers could be formed.

机译：进行了一系列电子显微镜研究，研究了加热到700-800℃的Si衬底与沉积在有和没有阻挡层的氮气环境中的Ti-Co，Ti-Ni或Ta-Ni合金之间的表面扩散反应所产生的微观结构。 TEM数据表明，在高N_2压力环境下沉积的Ta-Ni膜有明显的相分离成TaSi_2和NiSi_2。在较低的N_2压力下沉积导致形成混合的Ni-Ta-Si层。即使在高N_2压力下，Ni-Ti膜也没有相分离作用。阻挡层的存在强烈影响了Co-Ti-Si系统中的表面扩散反应。在Si表面上形成Ti-（O）或CoSi_x非晶层阻止了Si和Co的相互扩散，从而甚至可以形成纯Co或Co_2Si层。

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来源
《Novel Materials and Processes for Advanced CMOS》|2002年|p.123-128|共6页
会议地点 Boston MA(US);Boston MA(US)
作者
A.L.Vasiliev; M.Aindow; A.G.Vasiliev; I.A.Horin; A.A.Orlikovsky;
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Department of Metallurgy and Materials Eng., Institute of Materials Science, Unit 3136, University of Connecticut, Storrs, CT 06269-3136;

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原文格式 PDF
正文语种 eng
中图分类无线电电子学、电信技术;
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4. Phase Formation in Ti (Ta)-Ni and Co-Ti Films Deposited on (001)Si in N_2 Atmospheres [C] . A. L. Vasiliev, M. Aindow, A. G. Vasiliev, Materials Research Society Symposium . 2003

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Phase Formation in Ti (Ta)-Ni and Co-Ti Films Deposited on (001)Si in N_2 Atmospheres

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