APPLICATIONS OF SILICON GERMANIUM ELECTRODES IN ULSI

机译：硅锗电极在超大规模集成电路中的应用

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Applications of poly Silicon Germanium (Si_xGe_(1-x)) film in ULSI device integration are discussed for MOSFET gate electrode, interconnect (landing pad) formation, and capacitor electrodes. In the gate electrode, MOSFET drive current are shown to be improved using poly Si_xGe_(1-x) gate electrodes for the PMOS and degraded for NMOS when compared with poly Si gate electrodes. For interconnect (landing pad) formation, the poly Si_xGe_(1-x) is shown to demonstrate dopant profile controllability for the S/D junctions and to impact the device. In the DRAM capacitor electrodes, state-of-the-art hemispherical grain (HSG) surface enhancement is demonstrated on Si_xGe_(1-x) films and is shown to be useful for DRAM cell capacitor bottom electrodes in sub-0.09 μm technologies. Finally, directions of poly Si_xGe_(1-x) processes for future ULSI devices are discussed.

机译：讨论了多晶硅锗（Si_xGe_（1-x））膜在ULSI器件集成中的应用，以用于MOSFET栅极，互连（焊盘）形成和电容器电极。在栅极中，与多晶硅栅极相比，使用多晶硅P_MOS_xGe_（1-x）栅极可改善MOSFET驱动电流，而对于NMOS则可降低MOSFET驱动电流。对于互连（焊盘）形成，显示了多晶硅Si_xGe_（1-x）可以证明S / D结的掺杂剂分布可控性并影响器件。在DRAM电容器电极中，在Si_xGe_（1-x）膜上展示了最新的半球形晶粒（HSG）表面增强性能，并显示出可用于0.09μm以下技术中的DRAM电容器底部电极。最后，讨论了用于未来ULSI器件的poly Si_xGe_（1-x）工艺的方向。

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来源
《Electrochemical Society Meeting and International Symposium on ULSI Process Integration III; 20030428-20030502; Paris; FR》|2003年|P.230-240|共11页
会议地点 Paris(FR);Paris(FR)
作者
Er-Xuan Ping; Eric Blomiley; Fernando Gonzalez;
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作者单位

Micron Technology, Inc. 8000 S. Federal Way, M.S. 306 Boise, Idaho 83707-0006;

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会议组织
原文格式 PDF
正文语种 eng
中图分类大规模集成电路、超大规模集成电路;
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APPLICATIONS OF SILICON GERMANIUM ELECTRODES IN ULSI

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