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Electrochemical Etching of Deep Macropore Array on p-Type Silicon Wafers

机译：p型硅晶片上的深大孔阵列的电化学刻蚀

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The formation of deep macropore array of p-type Silicon in HF electrolyte has been investigated. Then a series of electrochemical etching experiments and tests were carried out in three poles electrobath using different concentration HF electrolyte. HF concentration is a very important factor that determined whether electrochemical reaction was accomplished or not. By means of theoretical analysis and investigation, it is generally assumed that etching proceeds through sequential reaction of Si-H groups with F to form Si-X, which determined whether electrochemical etching reaction was carried out or not. The electrochemical etching of p-type Silicon macropore array in aqueous fluoride solutions is satisfied with economic requirements for costs of fabricating deep macropores. The consequences are benefit to Silicon electrochemical deep macropore array etching technology.
机译：研究了HF电解质中p型硅深大孔阵列的形成。然后在三极电浴中使用不同浓度的HF电解质进行了一系列电化学蚀刻实验和测试。 HF浓度是决定电化学反应是否完成的非常重要的因素。通过理论分析和研究，通常假设通过Si-H基团与F的顺序反应形成Si-X而进行蚀刻，这确定是否进行了电化学蚀刻反应。 p型硅大孔阵列在氟化物水溶液中的电化学刻蚀满足了制造深大孔成本的经济要求。结果对硅电化学深大孔阵列蚀刻技术有利。

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